Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)
نویسندگان
چکیده
منابع مشابه
Analytical Modeling and Simulation of Short-channel Effects in a Fully Depleted Dual-material Gate (dmg) Soi Mosfet
Silicon-on-insulator (SOI) has been the forerunner of the CMOS technology in the last decade offering superior CMOS devices with higher speed, higher density, excellent radiation hardness and reduced second order effects for submicron VLSI applications. Recent experimental studies have invigorated interest in fully depleted (FD) SOI devices because of their potentially superior scalability rela...
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ژورنال
عنوان ژورنال: Engineering Science and Technology, an International Journal
سال: 2014
ISSN: 2215-0986
DOI: 10.1016/j.jestch.2014.06.002